Narrowband ultraviolet field-emission device using Gd-doped AlN
نویسندگان
چکیده
منابع مشابه
Light emission from lanthanide-doped AlN and AlxIn1-xN layers
Optical properties of lanthanide doped phosphors and semiconductors are of great interest especially in view of solid-state light emitting devices of the next generation. Radiative intra-4f electron transitions of trivalent lanthanide ions present sharp and well-de ned emission lines at the wavelengths from UV to IR part of the spectrum. However, their intensity is comparatively weak hitherto. ...
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ژورنال
عنوان ژورنال: IOP Conference Series: Materials Science and Engineering
سال: 2009
ISSN: 1757-899X
DOI: 10.1088/1757-8981/1/1/012001